? semiconductor components industries, llc, 2012 may, 2012 ? rev. 14 1 publication order number: 1n5333b/d 1n53 series 5 watt surmetic 40 zener voltage regulators this is a complete series of 5 watt zener diodes with tight limits and better operating characteristics that reflect the superior capabilities of silicon ? oxide passivated junctions. all this in an axial lead, transfer ? molded plastic package that offers protection in all common environmental conditions. features ? zener voltage range ? 3.3 v to 200 v ? esd rating of class 3 (>16 kv) per human body model ? surge rating of up to 180 w @ 8.3 ms ? maximum limits guaranteed on up to six electrical parameters ? pb ? free packages are available* mechanical characteristics case: void free, transfer ? molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum lead temperature for soldering purposes: 260 c, 1/16 in. from the case for 10 seconds polarity: cathode indicated by polarity band mounting position: any maximum ratings rating symbol value unit max. steady state power dissipation @ t l = 25 c, lead length = 3/8 in derate above 25 c junction ? to ? lead thermal resistance p d jl 5 40 25 w mw/ c c/w operating and storage temperature range t j , t stg ? 65 to +200 (note 1) c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. max operating temperature for dc conditions is 150 c, but not to exceed 200 c for pulsed conditions with low duty cycle or non ? repetitive. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. http://onsemi.com axial lead case 017aa plastic cathode anode marking diagram a = assembly location 1n53xxb = device number (refer to tables on pages 3 & 4) yy = year ww = work week =pb ? free package a 1n 53xxb yyww device package shipping ? ordering information ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. 1n53xxb, g axial lead (pb ? free) 1000 units/box 1n53xxbrl, g axial lead (pb ? free) 4000/tape & reel (note: microdot may be in either location)
zener voltage regulator i f v i i r i zt v r v z v f 1n53 series http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted, v f = 1.2 v max @ i f = 1.0 a for all types) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i zk reverse current z zk maximum zener impedance @ i zk i r reverse leakage current @ v r v r breakdown voltage i f forward current v f forward voltage @ i f i r maximum surge current @ t a = 25 c v z reverse zener voltage change i zm maximum dc zener current electrical characteristics (t a = 25 c unless otherwise noted, v f = 1.2 v max @ i f = 1.0 a for all types) device ? (note 2) device marking zener voltage (note 3) zener impedance (note 3) leakage current i r (note 4) v z (note 5) i zm (note 6) v z (volts) @ i zt z zt @ i zt z zk @ i zk i zk i r @ v r min nom max ma ma a max volts a volts ma 1n5333b 1n5333b 3.14 3.3 3.47 380 3 400 1 300 1 20 0.85 1440 1n5334b 1n5334b 3.42 3.6 3.78 350 2.5 500 1 150 1 18.7 0.8 1320 1n5335b 1n5335b 3.71 3.9 4.10 320 2 500 1 50 1 17.6 0.54 1220 1n5336b 1n5336b 4.09 4.3 4.52 290 2 500 1 10 1 16.4 0.49 1100 1n5337b 1n5337b 4.47 4.7 4.94 260 2 450 1 5 1 15.3 0.44 1010 1n5338b 1n5338b 4.85 5.1 5.36 240 1.5 400 1 1 1 14.4 0.39 930 1n5339b 1n5339b 5.32 5.6 5.88 220 1 400 1 1 2 13.4 0.25 865 1n5340b 1n5340b 5.70 6.0 6.30 200 1 300 1 1 3 12.7 0.19 790 1n5341b 1n5341b 5.89 6.2 6.51 200 1 200 1 1 3 12.4 0.1 765 1n5342b 1n5342b 6.46 6.8 7.14 175 1 200 1 10 5.2 11.5 0.15 700 1n5343b 1n5343b 7.13 7.5 7.88 175 1.5 200 1 10 5.7 10.7 0.15 630 1n5344b 1n5344b 7.79 8.2 8.61 150 1.5 200 1 10 6.2 10 0.2 580 1n5345b 1n5345b 8.27 8.7 9.14 150 2 200 1 10 6.6 9.5 0.2 545 1n5346b 1n5346b 8.65 9.1 9.56 150 2 150 1 7.5 6.9 9.2 0.22 520 1n5347b 1n5347b 9.50 10 10.5 125 2 125 1 5 7.6 8.6 0.22 475 devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value. 2. tolerance and type number designation: the jedec type numbers shown indicate a tolerance of 5%. 3. zener voltage (v z ) and impedance (i zt and i zk ): test conditions for zener voltage and impedance are as follows: i z is applied 40 10 ms prior to reading. mounting contacts are located 3/8 to 1/2 from the inside edge of mounting clips to the body of the diode (t a = 25 c +8 c, ? 2 c). 4. surge current (i r ): surge current is specified as the maximum allowable peak, non ? recurrent square ? wave current with a pulse width, pw, of 8.3 ms. the data given in figure 5 may be used to find the maximum surge current for a square wave of any pulse width be tween 1 ms and 1000 ms by plotting the applicable points on logarithmic paper. examples of this, using the 3.3 v and 200 v zener are shown in figure 6. mounting contact located as specified in note 2 (t a = 25 c +8 c, ? 2 c). 5. voltage regulation ( v z ): the conditions for voltage regulation are as follows: v z measurements are made at 10% and then at 50% of the i z max value listed in the electrical characteristics table. the test current time duration for each v z measurement is 40 10 ms. mounting contact located as specified in note 2 (t a = 25 c +8 c, ? 2 c). 6. maximum regulator current (i zm ): the maximum current shown is based on the maximum voltage of a 5% type unit, therefore, it applies only to the b ? suffix device. the actual i zm for any device may not exceed the value of 5 watts divided by the actual v z of the device. t l = 25 c at 3/8 maximum from the device body. ?the ?g?? suffix indicates pb ? free package or pb ? free packages are available.
1n53 series http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted, v f = 1.2 v max @ i f = 1.0 a for all types) device ? (note 7) device marking zener voltage (note 8) zener impedance (note 8) leakage current i r (note 9) v z (note 10) i zm (note 11) v z (volts) @ i zt z zt @ i zt z zk @ i zk i zk i r @ v r min nom max ma ma a max volts a volts ma 1n5348b 1n5348b 10.45 11 11.55 125 2.5 125 1 5 8.4 8.0 0.25 430 1n5349b 1n5349b 11.4 12 12.6 100 2.5 125 1 2 9.1 7.5 0.25 395 1n5350b 1n5350b 12.35 13 13.65 100 2.5 100 1 1 9.9 7.0 0.25 365 1n5351b 1n5351b 13.3 14 14.7 100 2.5 75 1 1 10.6 6.7 0.25 340 1n5352b 1n5352b 14.25 15 15.75 75 2.5 75 1 1 11.5 6.3 0.25 315 1n5353b 1n5353b 15.2 16 16.8 75 2.5 75 1 1 12.2 6.0 0.3 295 1n5354b 1n5354b 16.15 17 17.85 70 2.5 75 1 0.5 12.9 5.8 0.35 280 1n5355b 1n5355b 17.1 18 18.9 65 2.5 75 1 0.5 13.7 5.5 0.4 264 1n5356b 1n5356b 18.05 19 19.95 65 3 75 1 0.5 14.4 5.3 0.4 250 1n5357b 1n5357b 19 20 21 65 3 75 1 0.5 15.2 5.1 0.4 237 1n5358b 1n5358b 20.9 22 23.1 50 3.5 75 1 0.5 16.7 4.7 0.45 216 1n5359b 1n5359b 22.8 24 25.2 50 3.5 100 1 0.5 18.2 4.4 0.55 198 1n5360b 1n5360b 23.75 25 26.25 50 4 110 1 0.5 19 4.3 0.55 190 1n5361b 1n5361b 25.65 27 28.35 50 5 120 1 0.5 20.6 4.1 0.6 176 1n5362b 1n5362b 26.6 28 29.4 50 6 130 1 0.5 21.2 3.9 0.6 170 1n5363b 1n5363b 28.5 30 31.5 40 8 140 1 0.5 22.8 3.7 0.6 158 1n5364b 1n5364b 31.35 33 34.65 40 10 150 1 0.5 25.1 3.5 0.6 144 1n5365b 1n5365b 34.2 36 37.8 30 11 160 1 0.5 27.4 3.5 0.65 132 1n5366b 1n5366b 37.05 39 40.95 30 14 170 1 0.5 29.7 3.1 0.65 122 1n5367b 1n5367b 40.85 43 45.15 30 20 190 1 0.5 32.7 2.8 0.7 110 1n5368b 1n5368b 44.65 47 49.35 25 25 210 1 0.5 35.8 2.7 0.8 100 1n5369b 1n5369b 48.45 51 53.55 25 27 230 1 0.5 38.8 2.5 0.9 93 1n5370b 1n5370b 53.2 56 58.8 20 35 280 1 0.5 42.6 2.3 1.0 86 1n5371b 1n5371b 57 60 63 20 40 350 1 0.5 45.5 2.2 1.2 79 1n5372b 1n5372b 58.9 62 65.1 20 42 400 1 0.5 47.1 2.1 1.35 76 1n5373b 1n5373b 64.6 68 71.4 20 44 500 1 0.5 51.7 2.0 1.52 70 1n5374b 1n5374b 71.25 75 78.75 20 45 620 1 0.5 56 1.9 1.6 63 1n5375b 1n5375b 77.9 82 86.1 15 65 720 1 0.5 62.2 1.8 1.8 58 1n5377b 1n5377b 86.45 91 95.55 15 75 760 1 0.5 69.2 1.6 2.2 52.5 1n5378b 1n5378b 95 100 105 12 90 800 1 0.5 76 1.5 2.5 47.5 1n5380b 1n5380b 114 120 126 10 170 1150 1 0.5 91.2 1.3 2.5 39.5 1n5381b 1n5381b 123.5 130 136.5 10 190 1250 1 0.5 98.8 1.2 2.5 36.6 1n5383b 1n5383b 142.5 150 157.5 8 330 1500 1 0.5 114 1.1 3.0 31.6 1n5384b 1n5384b 152 160 168 8 350 1650 1 0.5 122 1.1 3.0 29.4 1N5386B 1N5386B 171 180 189 5 430 1750 1 0.5 137 1.0 4.0 26.4 1n5387b 1n5387b 180.5 190 199.5 5 450 1850 1 0.5 144 0.9 5.0 25 1n5388b 1n5388b 190 200 210 5 480 1850 1 0.5 152 0.9 5.0 23.6 devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value. 7. tolerance and type number designation: the jedec type numbers shown indicate a tolerance of 5%. 8. zener voltage (v z ) and impedance (i zt and i zk ): test conditions for zener voltage and impedance are as follows: i z is applied 40 10 ms prior to reading. mounting contacts are located 3/8 to 1/2 from the inside edge of mounting clips to the body of the diode (t a = 25 c +8 c, ? 2 c). 9. surge current (i r ): surge current is specified as the maximum allowable peak, non ? recurrent square ? wave current with a pulse width, pw, of 8.3 ms. the data given in figure 5 may be used to find the maximum surge current for a square wave of any pulse width be tween 1 ms and 1000 ms by plotting the applicable points on logarithmic paper. examples of this, using the 3.3 v and 200 v zener are shown in figure 6. mounting contact located as specified in note 7 (t a = 25 c +8 c, ? 2 c). 10. voltage regulation ( v z ): the conditions for voltage regulation are as follows: v z measurements are made at 10% and then at 50% of the i z max value listed in the electrical characteristics table. the test current time duration for each v z measurement is 40 10 ms. mounting contact located as specified in note 7 (t a = 25 c +8 c, ? 2 c). 11. maximum regulator current (i zm ): the maximum current shown is based on the maximum voltage of a 5% type unit, therefore, it applies only to the b ? suffix device. the actual i zm for any device may not exceed the value of 5 watts divided by the actual v z of the device. t l = 25 c at 3/8 maximum from the device body. ?the ?g?? suffix indicates pb ? free package or pb ? free packages are available.
1n53 series http://onsemi.com 4 figure 1. typical thermal resistance 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 equal conduction through each lead l l l, lead length to heatsink (inch) jl , junction\to\lead thermal resistance ( c/w) temperature coefficients figure 2. temperature coefficient-range for units 3 to 10 volts figure 3. temperature coefficient-range for units 10 to 220 volts v z , zener voltage @ i zt (volts) 10 8 6 4 2 0 -2 34 56 7 8910 range 300 200 100 50 30 20 10 5 0 20 40 60 80 100 120 140 160 180 200 220 v z , zener voltage @ i zt (volts) v z , temperature coefficient (mv/ c) @ i zt v z , temperature coefficient (mv/ c) @ i zt range
1n53 series http://onsemi.com 5 0.5 figure 4. typical thermal response l, lead length = 3/8 inch figure 5. maximum non-repetitive surge current versus nominal zener voltage (see note 4) jl (t, d), transient thermal resistance junction\to\lead ( c/w) 0.01 0.0000001 duty cycle, d = t 1 /t 2 single pulse t jl = jl (t)p pk repetitive pulses t jl = jl (t,d)p pk jl (t,d) = d * jl ( )+(1 ? d) * jl (t) [where jl (t) is d = 0 curve] p pk t 1 t 2 t, time (seconds) i r , peak surge current (amps) 40 20 10 4 2 1 0.1 0.2 0.4 34 6810 20 30 40 60 80 100 200 *square wave pw=100ms* pw=1000ms* pw=1ms* pw=8.3ms* nominal v z (v) 30 20 10 0.1 0.2 0.5 1 2 5 1 10 100 1000 1000 100 10 1 0.1 1 234 5678 910 i z , zener current (ma) pw, pulse width (ms) v z , zener voltage (volts) figure 6. peak surge current versus pulse width (see note 4) figure 7. zener voltage versus zener current v z = 3.3 thru 10 volts v z =200v v z =3.3v plotted from information given in figure 5 t c =25 c t=25 c i r , peak surge current (amps) i z , zener current (ma) v z , zener voltage (volts) 1000 100 10 1 0.1 10 20 30 40 50 60 70 80 t=25 c figure 8. zener voltage versus zener current v z = 11 thru 75 volts 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 0.1 1 10 100 d = 0 0.2 0.1 0.05 0.02 0.01
1n53 series http://onsemi.com 6 100 10 1 0.1 80 100 120 140 160 180 200 220 v z , zener voltage (volts) i z , zener current (ma) figure 9. zener voltage versus zener current v z = 82 thru 200 volts application note since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. the following procedure is recommended: lead temperature, t l , should be determined from: t l = la p d + t a la is the lead-to-ambient thermal resistance and p d is the power dissipation. junction temperature, t j , may be found from: t j = t l + t jl t jl is the increase in junction temperature above the lead temperature and may be found from figure 4 for a train of power pulses or from figure 1 for dc power. t jl = jl p d for worst-case design, using expected limits of i z , limits of p d and the extremes of t j ( t j ) may be estimated. changes in voltage, v z , can then be found from: v = vz t j vz , the zener voltage temperature coefficient, is found from figures 2 and 3. under high power-pulse operation, the zener voltage will vary with time and may also be affe cted significantly by the zener resistance. for best regulation, keep current excursions as low as possible. data of figure 4 should not be used to compute surge capability. surge limitations are given in figure 5. they are lower than would be expected by considering only junction temperature, as current crowding ef fects cause temperatures to be extremely high in small spots resulting in device degradation should the limits of figure 5 be exceeded.
1n53 series http://onsemi.com 7 package dimensions surmetic 40, axial lead case 017aa issue o b d f k a f k dim min max min max millimeters inches a 0.330 0.350 8.38 8.89 b 0.130 0.145 3.30 3.68 d 0.037 0.043 0.94 1.09 f --- 0.050 --- 1.27 k 1.000 1.250 25.40 31.75 notes: 1. controlling dimension: inch 2. lead diameter and finish not controlled within dimension f. 3. cathode band indicates polarity on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. 1n5333b/d surmetic is a trademark of semiconductor components industries, llc (scillc). publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
|
